Semiconducting Lead Chalcogenides


Book Description

The last decade has seen radical changes in our understand ing of the physical properties of semiconductors. It has been es tablished that the energy spectrum of electrons is much more complex than had originally been predicted: in many cases, there are several energy bands with different parameters. It has been found that the effective carrier mass, which had been assumed to be constant for a given material, depends on the carrier energy, temperature, pressure, and even the nature and number of de fects. Our understanding of the mechanism of the motion and scat tering of carriers, recombination mechanisms, and interaction with electromagnetic radiation has also changed. New applications of semiconducting materials have been discovered and old ones have been extended; these include high-power devices, devices sensitive to infrared radiation, and lasers. The visible evidence of the pro gress is in the form of hundreds of publications, some of which re port extremely refined and comprehensive investigations of semi conducting materials. A scientist concerned with investigations or applications of semiconducting materials or devices cannot ignore these publica tions because of the possibility of repeating work already done or of committing serious error. s. On the other hand, a beginner would require years to obtain a thorough understanding of the literature in his own narrow subject, and in many cases this process would be like the chase of a tortoise by Achilles in the paradox of Zeno of Elea (495-435 B. C'>.




Lead Chalcogenides


Book Description

Lead Chalcogenides remain one of the basic materials of modern infrared optoelectronics. This volume presents the [roperties of lead chalcogenides, including the basic physical features, the bulk and epitaxial growth technique, and the 2-D physics of lead chalcogenide-based structures. In addition, the theoretical appraoches for band structure and impurity state calculations are reviewed.




Handbook of Luminescent Semiconductor Materials


Book Description

Photoluminescence spectroscopy is an important approach for examining the optical interactions in semiconductors and optical devices with the goal of gaining insight into material properties. With contributions from researchers at the forefront of this field, Handbook of Luminescent Semiconductor Materials explores the use of this technique to stud




Switching in Semiconductor Diodes


Book Description

It gives me great pleasure to learn that this book, whose ori gin owes much to the work of American scientists and engineers on semiconductor technology, will reach American and other English speaking readers. I am grateful to Plenum Publishing Corporation for arranging the American edition of this book and to Mr. Albin Tybulewicz for his translation, September 5, 1968 Yu. R. Nosov v Preface to the Russian Edition One of the most important applications of semiconductor diodes is their use in electronic pulse circuits. The response of these diodes under switching conditions is governed by the phenomena of accumulation and dispersal of non equlibrium carriers, which are also observed in other p-n junction devices. It was found in the late 1940's that when point-contact ger manium diodes were used in circuits through which short (several tenths of a microsecond) electrical pulses were being passed, the 1 effective reverse resistance of these diodes decreased considerably below the static value. Further studies showed that when a diode was switched rapidly from the forward to the reverse direction, an anomalously large reverse current flowed for some time. In view of the importance of this phenomenon in the efforts to reduce the response time of pulse circuits, many investigations of the phenomenon were carried out and these investigations pro vided the basis of a theory of transient processes in semiconductor diodes.







Electron Transport Phenomena in Semiconductors


Book Description

This book contains the first systematic and detailed exposition of the linear theory of the stationary electron transport phenomena in semiconductors. Arbitrary isotropic and anisotropic nonparabolic bands as well as p-Ge-type bands are considered. Phonon drag effect are taken account of in an arbitrary nonquantizing magnetic field. Scattering theory is discussed in detail with account taken of the Bloch wave functions effect. Transport phenomena in the quantizing magnetic field are studied as well as the size effects in thin films. Band structures of the semiconductors and semiconductor compounds of interest are also considered.The main part of the book deals with the three important problems: charge carrier statistics in a semiconductor, classical and quantum theory of the electron transport phenomena. All the theoretical results considered as well as the validity conditions are presented in the form which may be directly used to interpret experimental data.




Solid State Physics


Book Description

Solid State Physics




Handbook of Optical Constants of Solids


Book Description

While bits and pieces of the index of refraction n and extinction coefficient k for a given material can be found in several handbooks, the Handbook of Optical Constants of Solids gives for the first time a single set of n and k values over the broadest spectral range (ideally from x-ray to mm-wave region). The critiquers have chosen the numbers for you, based on their own broad experience in the study of optical properties. Whether you need one number at one wavelength or many numbers at many wavelengths, what is available in the literature is condensed down into a single set of numbers. - Contributors have decided the best values for n and k - References in each critique allow the reader to go back to the original data to examine and understand where the values have come from - Allows the reader to determine if any data in a spectral region needs to be filled in - Gives a wide and detailed view of experimental techniques for measuring the optical constants n and k - Incorporates and describes crystal structure, space-group symmetry, unit-cell dimensions, number of optic and acoustic modes, frequencies of optic modes, the irreducible representation, band gap, plasma frequency, and static dielectric constant




Narrow-Gap Semiconductors


Book Description




Organic Semiconductors and Biopolymers


Book Description

In recent years, considerable progress has been made in the study of organic semiconductors. The main directions of investigation, have been determined and substantial results have been achieved in the theoretical treatment of many questions. However, the range of investigations is so broad that it is impossible to discuss all branches fully in a short monograph. In fact, the chemist synthe sizing systems with conjugated bonds and studying their reactivity, the physical chemist studying the catalytic and absorption proper ties of substances with conjugated bonds, the physicist studying the photoelectric and magnetic characteristics of dyes and polynuclear hydrocarbons, and the biologist attempting to explain the mechan ism of energy transfer in the living cell -they are all working in the field of organic semiconductors. Consequentiy, in the present book the authors have not attempted to include all sides of the problem of organic semiconductors. The monograph considers in detail only those questions which appear to the authors to be most immediate and interesting. Other questions are touched on only to the extent necessary to illustrate the main material. The book begins with a statement of material which is of the nature of a review. The main classes of organic semiconductors are mentioned but the methods for their preparation are not illus trated in detail. Somewhat more attention is devoted to the depen dence of the electrical characteristics of organic semiconductors on their structure and chemical composition.