SiGe--materials, Processing, and Devices
Author : David Louis Harame
Publisher : The Electrochemical Society
Page : 1242 pages
File Size : 13,7 MB
Release : 2004
Category : Science
ISBN : 9781566774208
Author : David Louis Harame
Publisher : The Electrochemical Society
Page : 1242 pages
File Size : 13,7 MB
Release : 2004
Category : Science
ISBN : 9781566774208
Author : David Harame
Publisher : The Electrochemical Society
Page : 1136 pages
File Size : 44,62 MB
Release : 2008
Category : Electronic apparatus and appliances
ISBN : 1566776562
Advanced semiconductor technology is depending on innovation and less on "classical" scaling. SiGe, Ge, and Related Compounds have become a key component of the arsenal in improving semiconductor performance. This issue of ECS Transactions discusses the technology to form these materials, process them, FET devices incorporating them, Surfaces and Interfaces, Optoelectronic devices, and HBT devices.
Author : D. Harame
Publisher : The Electrochemical Society
Page : 1066 pages
File Size : 18,74 MB
Release : 2010-10
Category : Science
ISBN : 1566778255
Advanced semiconductor technology is depending on innovation and less on "classical" scaling. SiGe, Ge, and Related Compounds has become a key component in the arsenal in improving semiconductor performance. This symposium discusses the technology to form these materials, process them, FET devices incorporating them, Surfaces and Interfaces, Optoelectronic devices, and HBT devices.
Author : D. Harame
Publisher : The Electrochemical Society
Page : 1042 pages
File Size : 18,73 MB
Release :
Category :
ISBN : 1607685434
Author : R. Szweda
Publisher : Elsevier
Page : 419 pages
File Size : 11,6 MB
Release : 2002-11-26
Category : Business & Economics
ISBN : 0080541216
The first edition of Silicon Germanium Materials & Devices - A Market & Technology Overview to 2006 examines the development of the silicon germanium business over a six-year period 2001 to 2006. It analyses the trends in markets, technologies and industry structure and profiles all the major players. It is specifically aimed at users and manufacturers of substrates, epiwafers, equipment and devices. The analysis includes a competitive assessment of the market of silicon germanium vs. gallium arsenide, indium phosphide vs. other forms of silicon. Silicon Germanium Materials & Devices - A Market & Technology Overview to 2006 is designed to assist with business plans, R&D and manufacturing strategies. It will be an indispensable aid for managers responsible for business development, technology assessment and market research. The report examines the rapid development of silicon germanium from an R&D curiosity to production status. An extensive treatment from materials through processes to devices and applications it encapsulates the entire silicon germanium business of today and assesses future directions. For a PDF version of the report please call Tina Enright on +44 (0) 1865 843008 for price details.
Author : Q. Liu
Publisher : The Electrochemical Society
Page : 450 pages
File Size : 32,75 MB
Release : 2018-09-21
Category : Science
ISBN : 1607688530
Author : V. Narayanan
Publisher : The Electrochemical Society
Page : 367 pages
File Size : 25,51 MB
Release : 2009-05
Category : Gate array circuits
ISBN : 1566777097
This issue of ¿ECS Transactions¿ describes processing, materials and equipment for CMOS front-end integration including gate stack, source/drain and channel engineering. Topics include strained Si/SiGe and Si/SiGe on insulator; high-mobility channels including III-V¿s, etc.; nanowires and carbon nanotubes; high-k dielectrics, metal and FUSI gate electrodes; doping/annealing for ultra-shallow junctions; low-resistivity contacts; advanced deposition (e.g. ALD, CVD, MBE), RTP, UV, plasma and laser-assisted processes.
Author : Anatoly Belous
Publisher : Artech House
Page : 629 pages
File Size : 26,93 MB
Release : 2017-07-31
Category : Technology & Engineering
ISBN : 1630814695
This invaluable second volume of a two-volume set is filled with details about the integrated circuit design for space applications. Various considerations for the selection and application of electronic components for designing spacecraft are discussed. The basic constructions of submicron transistors and schottky diodes during the technological process of production are explored. This book provides details on the energy consumption minimization methods for microelectronic devices. Specific topics include: Features and physical mechanisms of the effect of space radiation on all the main classes of microcircuits, including peculiarities of radiation impact on submicron integrated circuits;Special design, technology, and schematic methods of increasing the resistance to various types of space radiation;Recommendations for choosing research equipment and methods for irradiating various samples;Microcircuit designers on the composition of test elements for the study of the effect of radiation;Microprocessors, circuit boards, logic microcircuits, digital, analog, digital–analog microcircuits manufactured in various technologies (bipolar, CMOS, BiCMOS, SOI);Problems involved with designing high speed microelectronic devices and systems based on SOS-and SOI-structures;System-on-chip and system-in-package and methods for rejection of silicon microcircuits with hidden defects during mass production.
Author : David Louis Harame
Publisher : The Electrochemical Society
Page : 1280 pages
File Size : 12,73 MB
Release : 2006
Category : Electronic apparatus and appliances
ISBN : 1566775078
The second International SiGe & Ge: Materials, Processing, and Devices Symposium was part of the 2006 ECS conference held in Cancun, Mexico from October 29-Nov 3, 2006. This meeting provided a forum for reviewing and discussing all materials and device related aspects of SiGe & Ge. The hardcover edition includes a bonus CD-ROM containing the PDF of the entire issue.
Author : Howard R. Huff
Publisher : The Electrochemical Society
Page : 599 pages
File Size : 46,42 MB
Release : 2006
Category : Semiconductors
ISBN : 156677439X
This was the tenth symposium of the International Symposium on Silcon Material Science and Technology, going back to 1969. This issue provides a unique historical record of the program and will aid in the understanding of silicon materials over the last 35 years.