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Silicon-On-Insulator (SOI) Technology

Author : O. Kononchuk

Publisher : Elsevier

Page : 503 pages

File Size : 31,55 MB

Release : 2014-06-19

Category : Technology & Engineering

ISBN : 0857099256

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Book Description

Silicon-On-Insulator (SOI) Technology: Manufacture and Applications covers SOI transistors and circuits, manufacture, and reliability. The book also looks at applications such as memory, power devices, and photonics. The book is divided into two parts; part one covers SOI materials and manufacture, while part two covers SOI devices and applications. The book begins with chapters that introduce techniques for manufacturing SOI wafer technology, the electrical properties of advanced SOI materials, and modeling short-channel SOI semiconductor transistors. Both partially depleted and fully depleted SOI technologies are considered. Chapters 6 and 7 concern junctionless and fin-on-oxide field effect transistors. The challenges of variability and electrostatic discharge in CMOS devices are also addressed. Part two covers recent and established technologies. These include SOI transistors for radio frequency applications, SOI CMOS circuits for ultralow-power applications, and improving device performance by using 3D integration of SOI integrated circuits. Finally, chapters 13 and 14 consider SOI technology for photonic integrated circuits and for micro-electromechanical systems and nano-electromechanical sensors. The extensive coverage provided by Silicon-On-Insulator (SOI) Technology makes the book a central resource for those working in the semiconductor industry, for circuit design engineers, and for academics. It is also important for electrical engineers in the automotive and consumer electronics sectors. - Covers SOI transistors and circuits, as well as manufacturing processes and reliability - Looks at applications such as memory, power devices, and photonics



Silicon in Agriculture

Author : Yongchao Liang

Publisher : Springer

Page : 250 pages

File Size : 18,67 MB

Release : 2015-06-18

Category : Technology & Engineering

ISBN : 9401799784

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Book Description

This book mainly presents the current state of knowledge on the use of of Silicon (Si) in agriculture, including plants, soils and fertilizers. At the same time, it discusses the future interdisciplinary research that will be needed to further our knowledge and potential applications of Si in agriculture and in the environmental sciences in general. As the second most abundant element both on the surface of the Earth’s crust and in soils, Si is an agronomically essential or quasi-essential element for improving the yield and quality of crops. Addressing the use of Si in agriculture in both theory and practice, the book is primarily intended for graduate students and researchers in various fields of the agricultural, biological, and environmental sciences, as well as for agronomic and fertilizer industry experts and advisors. Dr. Yongchao Liang is a full professor at the College of Environmental and Resource Sciences of the Zhejiang University, Hangzhou, China. Dr. Miroslav Nikolic is a research professor at the Institute for Multidisciplinary Research of the University of Belgrade, Serbia. Dr. Richard Bélanger is a full professor at the Department of Plant Pathology of the Laval University, Canada and holder of a Canada Research Chair in plant protection. Dr. Haijun Gong is a full professor at College of Horticulture, Northwest A&F University, China. Dr. Alin Song is an associate professor at Institute of Agricultural Resources and Regional Planning, Chinese Academy of Agricultural Sciences, Beijing, China.



Silicon in Agriculture

Author : L.E. Datnoff

Publisher : Elsevier

Page : 425 pages

File Size : 50,49 MB

Release : 2001-04-11

Category : Technology & Engineering

ISBN : 0080541224

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Book Description

Presenting the first book to focus on the importance of silicon for plant health and soil productivity and on our current understanding of this element as it relates to agriculture.Long considered by plant physiologists as a non-essential element, or plant nutrient, silicon was the center of attention at the first international conference on Silicon in Agriculture, held in Florida in 1999.Ninety scientists, growers, and producers of silicon fertilizer from 19 countries pondered a paradox in plant biology and crop science. They considered the element Si, second only to oxygen in quantity in soils, and absorbed by many plants in amounts roughly equivalent to those of such nutrients as sulfur or magnesium. Some species, including such staples as rice, may contain this element in amounts as great as or even greater than any other inorganic constituent. Compilations of the mineral composition of plants, however, and much of the plant physiological literature largely ignore this element. The participants in Silicon in Agriculture explored that extraordinary discrepancy between the silicon content of plants and that of the plant research enterprise.The participants, all of whom are active in agricultural science, with an emphasis on crop production, presented, and were presented with, a wealth of evidence that silicon plays a multitude of functions in the real world of plant life. Many soils in the humid tropics are low in plant available silicon, and the same condition holds in warm to hot humid areas elsewhere. Field experience, and experimentation even with nutrient solutions, reveals a multitude of functions of silicon in plant life. Resistance to disease is one, toleration of toxic metals such as aluminum, another. Silicon applications often minimize lodging of cereals (leaning over or even becoming prostrate), and often cause leaves to assume orientations more favorable for light interception. For some crops, rice and sugarcane in particular, spectacular yield responses to silicon application have been obtained. More recently, other crop species including orchids, daisies and yucca were reported to respond to silicon accumulation and plant growth/disease control. The culture solutions used for the hydroponic production of high-priced crops such as cucumbers and roses in many areas (The Netherlands for example) routinely included silicon, mainly for disease control. The biochemistry of silicon in plant cell walls, where most of it is located, is coming increasingly under scrutiny; the element may act as a crosslinking element between carbohydrate polymers.There is an increased conviction among scientists that the time is at hand to stop treating silicon as a plant biological nonentity. The element exists, and it matters.



Porous Silicon in Practice

Author : M. J. Sailor

Publisher : John Wiley & Sons

Page : 214 pages

File Size : 38,63 MB

Release : 2012-01-09

Category : Science

ISBN : 3527641912

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Book Description

By means of electrochemical treatment, crystalline silicon can be permeated with tiny, nanostructured pores that entirely change the characteristics and properties of the material. One prominent example of this can be seen in the interaction of porous silicon with living cells, which can be totally unwilling to settle on smooth silicon surfaces but readily adhere to porous silicon, giving rise to great hopes for such future applications as programmable drug delivery or advanced, braincontrolled prosthetics. Porous silicon research is active in the fields of sensors, tissue engineering, medical therapeutics and diagnostics, photovoltaics, rechargeable batteries, energetic materials, photonics, and MEMS (Micro Electro Mechanical Systems). Written by an outstanding, well-recognized expert in the field, this book provides detailed, step-by-step instructions to prepare and characterize the major types of porous silicon. It is intended for those new to the fi eld. Sampling of topics covered: * Principles of Etching Porous Silicon * Etch Cell Construction and Considerations * Photonic Crystals, Microcavities, and Bragg Stacks Etched in Silicon * Preparation of Free-standing Films and Particles of Porous Silicon * Preparation of Photoluminescent Nanoparticles from Porous Silicon * Preparation of Silicon Nanowires by Electrochemical Etch of Silicon * Surface Modifi cation Chemistry and Biochemistry * Measurement of Optical Properties * Measurement of Pore Size, Porosity, Thickness, Surface Area The whole is backed by a generous use of color photographs to illustrate the described procedures in detail, plus a bibliography of further literature pertinent to a wide range of application fi elds. For materials scientists, chemists, physicists, optical physicists, biomaterials scientists, neurobiologists, bioengineers, and graduate students in those fields, as well as those working in the semiconductor industry.



Silicon-on-Insulator Technology: Materials to VLSI

Author : J.-P. Colinge

Publisher : Springer Science & Business Media

Page : 392 pages

File Size : 41,90 MB

Release : 2004-02-29

Category : Science

ISBN : 9781402077739

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Book Description

Silicon-on-Insulator Technology: Materials to VLSI, Third Edition, retraces the evolution of SOI materials, devices and circuits over a period of roughly twenty years. Twenty years of progress, research and development during which SOI material fabrication techniques have been born and abandoned, devices have been invented and forgotten, but, most importantly, twenty years during which SOI Technology has little by little proven it could outperform bulk silicon in every possible way. The turn of the century turned out to be a milestone for the semiconductor industry, as high-quality SOI wafers suddenly became available in large quantities. From then on, it took only a few years to witness the use of SOI technology in a wealth of applications ranging from audio amplifiers and wristwatches to 64-bit microprocessors. This book presents a complete and state-of-the-art review of SOI materials, devices and circuits. SOI fabrication and characterization techniques, SOI CMOS processing, and the physics of the SOI MOSFET receive an in-depth analysis. Silicon-on-Insulator Technology: Materials to VLSI, Third Edition, also describes the properties of other SOI devices, such as multiple gate MOSFETs, dynamic threshold devices and power MOSFETs. The advantages and performance of SOI circuits used in both niche and mainstream applications are discussed in detail. The SOI specialist will find this book invaluable as a source of compiled references covering the different aspects of SOI technology. For the non-specialist, the book serves an excellent introduction to the topic with detailed, yet simple and clear explanations. Silicon-on-Insulator Technology: Materials to VLSI, Third Edition is recommended for use as a textbook for classes on semiconductor device processing and physics at the graduate level.



Silicon-on-Insulator Technology

Author : J.-P. Colinge

Publisher : Springer Science & Business Media

Page : 236 pages

File Size : 50,25 MB

Release : 2013-03-09

Category : Technology & Engineering

ISBN : 1475721218

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Book Description

5. 2. Distinction between thick- and thin-film devices . . . . . . . . . . . . . . . . . . . . 109 5. 3. I-V Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 112 5. 3. 1. Threshold voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2 5. 3 . 2. Body effecL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1 8 5. 3. 3. Short-channel effects . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120 5. 3. 4. Output characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 24 5. 4. Transconductance and mobility . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 129 5. 4. 1 Transconductance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 129 5. 4. 2. Mobility . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 130 5. 5. Subthreshold slope . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 132 5. 6. Impact ionization and high-field effects . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 9 5. 6. 1. Kink effecL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 39 5. 6. 2. Hot-electron degradation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 143 5. 7. Parasitic bipolar effects . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 145 5. 7. 1. Anomalous subthreshold slope . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 45 5. 7. 2. Reduced drain breakdown voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 7 5. 8. Accumulation-mode p-channel MOSFET . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 9 CHAPTER 6 - Other SOl Devices . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 5 9 6. 1. Non-conventional devices adapted from bulk . . . . . . . . . . . . . . . . . . . . . . . . . . . 159 6. 1. 1. COMFET . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160 6. 1. 2. High-voltage lateral MOSFET . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 6 1 6. 1. 3. PIN photodiode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 162 6. 1. 4. JFET . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 163 6. 2. Novel SOl devices . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 164 6. 2. 1. Lubistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 164 6. 2. 2. Bipolar-MOS device . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 166 6. 2. 3. Double-gate MOSFET . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 69 6. 2. 4. Bipolar transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 172 6. 2. 5. Optical modulator . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 74 CHAPTER 7 - The sm MOSFET Operating in a Harsh Environment. . . . . . . . 1 77 7. 1. Radiation environment. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 7 7 7. 1. 1. SEU . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 178 7. 1. 2. Total dose . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 180 7. 1. 3. Dose-rate . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 8 4 7. 2. High-temperature operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 85 7. 2. 1. Leakage currents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .



Electrical Characterization of Silicon-on-Insulator Materials and Devices

Author : Sorin Cristoloveanu

Publisher : Springer Science & Business Media

Page : 414 pages

File Size : 14,59 MB

Release : 1995-06-30

Category : Technology & Engineering

ISBN : 9780792395485

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Book Description

Silicon on Insulator is more than a technology, more than a job, and more than a venture in microelectronics; it is something different and refreshing in device physics. This book recalls the activity and enthu siasm of our SOl groups. Many contributing students have since then disappeared from the SOl horizon. Some of them believed that SOl was the great love of their scientific lives; others just considered SOl as a fantastic LEGO game for adults. We thank them all for kindly letting us imagine that we were guiding them. This book was very necessary to many people. SOl engineers will certainly be happy: indeed, if the performance of their SOl components is not always outstanding, they can now safely incriminate the relations given in the book rather than their process. Martine, Gunter, and Y. S. Chang can contemplate at last the amount of work they did with the figures. Our SOl accomplices already know how much we borrowed from their expertise and would find it indecent to have their detailed contri butions listed. Jean-Pierre and Dimitris incited the book, while sharing their experience in the reliability of floating bodies. Our families and friends now realize the SOl capability of dielectrically isolating us for about two years in a BOX. Our kids encouraged us to start writing. Our wives definitely gave us the courage to stop writing. They had a hard time fighting the symptoms of a rapidly developing SOl allergy.



Silicon Values

Author : Jillian C. York

Publisher : Verso Books

Page : 305 pages

File Size : 20,55 MB

Release : 2021-03-23

Category : Political Science

ISBN : 1788738829

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Book Description

The battle for online rights and for the future of democracy Who decides what is permissible on the internet: Politicians? Mark Zuckerberg? Users? Who determines when political debate becomes hate speech? How does this impact our identity or our ability to create communities and to protest? Silicon Values reports on the war for digital rights and how major corporations—Facebook, Twitter, Google and Tiktok—threaten democracy as they harvest our personal data in the pursuit of profit.



Silicon in Organic Synthesis

Author : Ernest W. Colvin

Publisher : Butterworth-Heinemann

Page : 361 pages

File Size : 49,42 MB

Release : 2013-10-22

Category : Science

ISBN : 148314223X

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Book Description

Silicon in Organic Synthesis provides an introduction to the organic chemistry of silicon. This book places particular emphasis on the concept of silicon as a "ferryman, mediating the transformation of one wholly organic molecule into another. The book begins by reviewing the discovery and development of organosilicon compounds. This is followed by separate chapters on the physical properties of organosilicon compounds; the preparation of a-metallated organosilanes, which play a key role in preparative organosilicon chemistry; migration/rearrangement reactions of silicon; the preparation and chemistry of vinylsilanes, allylsilanes, arylsilanes, and organosilyl metallic compounds. Subsequent chapters cover the synthesis of compounds such as alkene, alkynylsilanes, allenylsilanes, silylketenes, alkyl silyl ethers, acyloxysilanes, and silyl enol ethers. This book aims to serve as a timely introduction to organic chemistry for students and practitioners of synthetic organic chemistry, as well as provide a source of useful information and possibly of new ideas to those already experienced in the area.



Silicon and Siliceous Structures in Biological Systems

Author : T.L. Simpson

Publisher : Springer Science & Business Media

Page : 589 pages

File Size : 23,68 MB

Release : 2012-12-06

Category : Science

ISBN : 1461259444

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Book Description

The publication of this book was undertaken with two purposes in view: to bring together informatian on the deposition by living organ isms of unique skeletal structures composed of amorphous silica, and to review recent data on the involvement of silicon in physiological and biochemical processes. Although widely varying viewpoints are represented, all the contributors are very interested in the events in volved in the formatian of siliceaus structures and their function. Data presented deal with these questions in a variety of plant and animal systems, and at levels ranging from the evolutionary to the biochemical and ultrastructural. Innovations in electron microscopy and, indeed, the advent of electron microscopy itself, have stimulated many ultra structural studies of silica deposition, work which has deepened and widened the interest in those organisms which routinely produce "glassy skeletons. " The question of how silicon participates in biological systems in volves a spectrum of fields that indudes the chemistry of silicon per se, its biogeochemistry, biochemistry, ecology, and so forth. In this book, however, attention is focused up on the biological aspects of silicon and siliceous structures, with emphasis on the evolutian, phylogeny, morphology, and distribution of siliceaus structures, on the cellular as peets of silica deposition, and on the physiological and biochemical roles of silicon. This volume represents the first compilatian of such data. Because such a variety of subjects and fields are covered, the reader will have to glean for himself some of the comparative aspects of the data.