Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics 9


Book Description

This issue of ECS Transactions contains the papers presented in the symposium on Silicon Nitride, Silicon Dioxide Thin Insulating Films, and Emerging Dielectics held May 6-11, 2007 in Chicago. Papers were presented on deposition, characterization and applications of the dielectrics including high- and low-k dielectrics, as well as interface states, device characterization, reliabiliy and modeling.







Handbook of Silicon Based MEMS Materials and Technologies


Book Description

The Handbook of Silicon Based MEMS Materials and Technologies, Second Edition, is a comprehensive guide to MEMS materials, technologies, and manufacturing that examines the state-of-the-art with a particular emphasis on silicon as the most important starting material used in MEMS. The book explains the fundamentals, properties (mechanical, electrostatic, optical, etc.), materials selection, preparation, manufacturing, processing, system integration, measurement, and materials characterization techniques, sensors, and multi-scale modeling methods of MEMS structures, silicon crystals, and wafers, also covering micromachining technologies in MEMS and encapsulation of MEMS components. Furthermore, it provides vital packaging technologies and process knowledge for silicon direct bonding, anodic bonding, glass frit bonding, and related techniques, shows how to protect devices from the environment, and provides tactics to decrease package size for a dramatic reduction in costs. - Provides vital packaging technologies and process knowledge for silicon direct bonding, anodic bonding, glass frit bonding, and related techniques - Shows how to protect devices from the environment and decrease package size for a dramatic reduction in packaging costs - Discusses properties, preparation, and growth of silicon crystals and wafers - Explains the many properties (mechanical, electrostatic, optical, etc.), manufacturing, processing, measuring (including focused beam techniques), and multiscale modeling methods of MEMS structures - Geared towards practical applications rather than theory




Advanced Interconnects for ULSI Technology


Book Description

Finding new materials for copper/low-k interconnects is critical to the continuing development of computer chips. While copper/low-k interconnects have served well, allowing for the creation of Ultra Large Scale Integration (ULSI) devices which combine over a billion transistors onto a single chip, the increased resistance and RC-delay at the smaller scale has become a significant factor affecting chip performance. Advanced Interconnects for ULSI Technology is dedicated to the materials and methods which might be suitable replacements. It covers a broad range of topics, from physical principles to design, fabrication, characterization, and application of new materials for nano-interconnects, and discusses: Interconnect functions, characterisations, electrical properties and wiring requirements Low-k materials: fundamentals, advances and mechanical properties Conductive layers and barriers Integration and reliability including mechanical reliability, electromigration and electrical breakdown New approaches including 3D, optical, wireless interchip, and carbon-based interconnects Intended for postgraduate students and researchers, in academia and industry, this book provides a critical overview of the enabling technology at the heart of the future development of computer chips.




Introduction to Microfabrication


Book Description

This accessible text is now fully revised and updated, providing an overview of fabrication technologies and materials needed to realize modern microdevices. It demonstrates how common microfabrication principles can be applied in different applications, to create devices ranging from nanometer probe tips to meter scale solar cells, and a host of microelectronic, mechanical, optical and fluidic devices in between. Latest developments in wafer engineering, patterning, thin films, surface preparation and bonding are covered. This second edition includes: expanded sections on MEMS and microfluidics related fabrication issues new chapters on polymer and glass microprocessing, as well as serial processing techniques 200 completely new and 200 modified figures more coverage of imprinting techniques, process integration and economics of microfabrication 300 homework exercises including conceptual thinking assignments, order of magnitude estimates, standard calculations, and device design and process analysis problems solutions to homework problems on the complementary website, as well as PDF slides of the figures and tables within the book With clear sections separating basic principles from more advanced material, this is a valuable textbook for senior undergraduate and beginning graduate students wanting to understand the fundamentals of microfabrication. The book also serves as a handy desk reference for practicing electrical engineers, materials scientists, chemists and physicists alike. www.wiley.com/go/Franssila_Micro2e




China Semiconductor Technology International Conference 2010 (CSTIC 2010)


Book Description

Our mission is to provide a forum for world experts to discuss technologies, address the growing needs associated with silicon technology, and exchange their discoveries and solutions for current issues of high interest. We encourage collaboration, open discussion, and critical reviews at this conference. Furthermore, we hope that this conference will also provide collaborative opportunities for those who are interested in the semiconductor industry in Asia, particularly in China.




Semiconductor Detector Systems


Book Description

Semiconductor sensors patterned at the micron scale combined with custom-designed integrated circuits have revolutionized semiconductor radiation detector systems. Designs covering many square meters with millions of signal channels are now commonplace in high-energy physics and the technology is finding its way into many other fields, ranging from astrophysics to experiments at synchrotron light sources and medical imaging. This book is the first to present a comprehensive discussion of the many facets of highly integrated semiconductor detector systems, covering sensors, signal processing, transistors and circuits, low-noise electronics, and radiation effects. The diversity of design approaches is illustrated in a chapter describing systems in high-energy physics, astronomy, and astrophysics. Finally a chapter "Why things don't work" discusses common pitfalls. Profusely illustrated, this book provides a unique reference in a key area of modern science.




Nanometer CMOS


Book Description

This book presents the material necessary for understanding the physics, operation, design, and performance of modern MOSFETs with nanometer dimensions. Other topics covered include high-k dielectrics and mobility enhancement techniques, MOSFETs for RF (radio frequency) applications, MOSFET fabrication technology.




Digital Integrated Circuit Design


Book Description

This practical, tool-independent guide to designing digital circuits takes a unique, top-down approach, reflecting the nature of the design process in industry. Starting with architecture design, the book comprehensively explains the why and how of digital circuit design, using the physics designers need to know, and no more.




Advanced Nanoscale ULSI Interconnects: Fundamentals and Applications


Book Description

In Advanced ULSI interconnects – fundamentals and applications we bring a comprehensive description of copper-based interconnect technology for ultra-lar- scale integration (ULSI) technology for integrated circuit (IC) application. In- grated circuit technology is the base for all modern electronics systems. You can ?nd electronics systems today everywhere: from toys and home appliances to a- planes and space shuttles. Electronics systems form the hardware that together with software are the bases of the modern information society. The rapid growth and vast exploitation of modern electronics system create a strong demand for new and improved electronic circuits as demonstrated by the amazing progress in the ?eld of ULSI technology. This progress is well described by the famous “Moore’s law” which states, in its most general form, that all the metrics that describe integrated circuit performance (e. g. , speed, number of devices, chip area) improve expon- tially as a function of time. For example, the number of components per chip d- bles every 18 months and the critical dimension on a chip has shrunk by 50% every 2 years on average in the last 30 years. This rapid growth in integrated circuits te- nology results in highly complex integrated circuits with an increasing number of interconnects on chips and between the chip and its package. The complexity of the interconnect network on chips involves an increasing number of metal lines per interconnect level, more interconnect levels, and at the same time a reduction in the interconnect line critical dimensions.