Ti-Si-N as a Cu Diffusion Barrier in Microelectronic Metallization
Author : Warren Franklin McArthur
Publisher :
Page : 284 pages
File Size : 32,5 MB
Release : 1999
Category :
ISBN :
Metallization
Author : S. P. Murarka
Publisher : Butterworth-Heinemann
Page : 268 pages
File Size : 47,47 MB
Release : 1993
Category : Computers
ISBN :
Book Description
This title covers fundemental concepts, properties and applicabilities of metals and alloys for use in various metallization schemes. Metallizations form the key components on electronic circuits - controlling device properties and providing power and device interconnections with the outside world or with other devices. The recent advent of submicron dimensions and increasingly faster devices in the semiconductor have challenged researchers to keep metallization schemes in line with new demanding requirements.
'Advances in Microelectronics: Reviews', Vol_1
Author : Sergey Yurish
Publisher : Lulu.com
Page : 536 pages
File Size : 46,73 MB
Release : 2017-12-24
Category : Technology & Engineering
ISBN : 8469786334
Book Description
The 1st volume of 'Advances in Microelectronics: Reviews' Book Series contains 19 chapters written by 72 authors from academia and industry from 16 countries. With unique combination of information in each volume, the 'Advances in Microelectronics: Reviews' Book Series will be of value for scientists and engineers in industry and at universities. In order to offer a fast and easy reading of the state of the art of each topic, every chapter in this book is independent and self-contained. All chapters have the same structure: first an introduction to specific topic under study; second particular field description including sensing applications. Each of chapter is ending by well selected list of references with books, journals, conference proceedings and web sites. This book ensures that readers will stay at the cutting edge of the field and get the right and effective start point and road map for the further researches and developments.
Frontiers Of Solid State Chemistry, Proceedings Of The International Symposium On Solid State Chemistry In China
Author : Jiesheng Chen
Publisher : World Scientific
Page : 606 pages
File Size : 29,3 MB
Release : 2002-07-25
Category : Science
ISBN : 981448783X
Book Description
Solid state chemistry is a multidisciplinary field that deals with the synthesis, structural characterization and properties of various solids, and it has been playing a more and more important role in the design and preparation of advanced materials. This book includes the excellent research results recently obtained by a wide spectrum of solid state chemists both from China and from abroad. Among the distinguished contributors are C N R Rao, M Greenblatt and Y T Qian, to name a few. A variety of subjects representing the frontiers of solid state chemistry — which are categorized into solids with electrical, optical and magnetic properties; porous solids and catalysts; hybrid inorganic-organic solids; solid nanomaterials; and new synthetic methods and theory — are presented. This book will benefit readers who are interested in the chemistry and physics of solids, as well as materials scientists and engineers.The proceedings have been selected for coverage in:• Chemistry Citation IndexTM• Index to Scientific & Technical Proceedings (ISTP CDROM version / ISI Proceedings)
Materials Reliability in Microelectronics VII: Volume 473
Author : J. Joseph Clement
Publisher :
Page : 488 pages
File Size : 50,59 MB
Release : 1997-10-20
Category : Technology & Engineering
ISBN :
Book Description
The inexorable drive for increased integrated circuit functionality and performance places growing demands on the metal and dielectric thin films used in fabricating these circuits, as well as spurring demand for new materials applications and processes. This book directly addresses issues of widespread concern in the microelectronics industry - smaller feature sizes, new materials and new applications that challenge the reliability of new technologies. While the book continues the focus on issues related to interconnect reliability, such as electromigration and stress, particular emphasis is placed on the effects of microstructure. An underlying theme is understanding the importance of interactions among different materials and associated interfaces comprising a single structure with dimensions near or below the micrometer scale. Topics include: adhesion and fracture; gate oxide growth and oxide interfaces; surface preparation and gate oxide reliability; oxide degradation and defects; micro-structure, texture and reliability; novel measurement techniques; interconnect performance and reliability modeling; electromigration and interconnect reliability and stress and stress relaxation.
Transition Metal Carbides and Nitrides
Author : Louis Toth
Publisher : Elsevier
Page : 296 pages
File Size : 29,40 MB
Release : 2014-04-11
Category : Technology & Engineering
ISBN : 032315722X
Book Description
Refractory Materials, Volume 7: Transition Metal Carbides and Nitrides discusses the developments in transition metal carbide and nitride research. This volume is organized into nine chapters that emphasize the mechanical and superconducting properties of these compounds. The introductory chapters deal with the general properties, preparation techniques, characterization, crystal chemistry, phase relationships, and thermodynamics of transition metal carbides and nitrides. The following chapter highlights the mechanical properties of these compounds, such as elastic and plastic deformation, fracture, strengthening mechanisms, and hardness. The discussion then shifts to specific electrical and magnetic properties, including electrical resistivity, Hall coefficient, and magnetic susceptibility. A separate chapter is devoted to carbides and nitrides as superconductors. The concluding chapters explore certain theories that explain the mechanisms of band structure and bonding in carbides and nitrides. This volume is of great value to research workers in metallurgy, ceramics, physics, chemistry, and related fields, as well as to advanced students investigating problems concerning high temperature materials or interstitial compounds.
Materials Reliability in Microelectronics
Author :
Publisher :
Page : 336 pages
File Size : 42,75 MB
Release : 1999
Category : Microelectronics
ISBN :
Book Description
Advanced Metallizations in Microelectronics: Volume 181
Author : Avishay Katz
Publisher :
Page : 672 pages
File Size : 31,62 MB
Release : 1990-09-12
Category : Technology & Engineering
ISBN :
Book Description
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Materials Reliability in Microelectronics V: Volume 391
Author : Anthony S. Oates
Publisher :
Page : 552 pages
File Size : 19,28 MB
Release : 1995-10-24
Category : Technology & Engineering
ISBN :
Book Description
This long-standing proceedings series is highly regarded as a premier forum for the discussion of microelectronics reliability issues. In this fifth book, emphasis is on the fundamental understanding of failure phenomena in thin-film materials. Special attention is given to electromigration and mechanical stress effects. The reliability of thin dielectrics and hot carrier degradation of transistors are also featured. Topics include: modeling and simulation of failure mechanisms; reliability issues for submicron IC technologies and packaging; stresses in thin films/lines; gate oxides; barrier layers; electromigration mechanisms; reliability issues for Cu metallizations; electromigration and microstructure; electromigration and stress voiding in circuit interconnects; and resistance measurements of electromigration damage.
Atomic Layer Deposition for Semiconductors
Author : Cheol Seong Hwang
Publisher : Springer Science & Business Media
Page : 266 pages
File Size : 22,78 MB
Release : 2013-10-18
Category : Science
ISBN : 146148054X
Book Description
Offering thorough coverage of atomic layer deposition (ALD), this book moves from basic chemistry of ALD and modeling of processes to examine ALD in memory, logic devices and machines. Reviews history, operating principles and ALD processes for each device.
