Trace Analysis of Semiconductor Materials


Book Description

Trace Analysis of Semiconductor Materials is a guidebook concerned with procedures of ultra-trace analysis. This book discusses six distinct techniques of trace analysis. These techniques are the most common and can be applied to various problems compared to other methods. Each of the four chapters basically includes an introduction to the principles and general statements. The theoretical basis for the technique involved is then briefly discussed. Practical applications of the techniques and the different instrumentations are explained. Then, the applications to trace analysis as pertaining to semiconductor materials are discussed. Chapter 1 discusses radiochemical practice, the analysis of semiconductor materials, separation techniques, several qualitative radiochemical schemes, radiochemical purification procedures, and several earlier reported studies. Chapter 2 covers emission spectroscopy, including its potential for future applications. Discussions in Chapter 3 explain the benefits of each of the four mass spectrometric methods, namely, the isotope dilution method, complete thermal vaporization, vacuum spark technique, and the ion bombardment method. Chapter 4 focuses on the absorption, fluorescence, and polarographic methods used in general trace analysis, including examples of semiconductor material applications and other problems that result when certain impurities are introduced into the test sample. This monograph will be useful for researchers in ultra-trace analysis, nuclear physics, and analytical chemistry.




Semiconductor Materials Analysis and Fabrication Process Control


Book Description

There is a growing awareness that the successful implementation of novel material systems and technology steps in the fabrication of microelectronic and optoelectronic devices, is critically dependent on the understanding and control of the materials, the process steps and their interactions. The contributions in this volume demonstrate that characterisation and analysis techniques are an essential support mechanism for research in these fields. Current major research themes are reviewed both in the development and application of diagnostic techniques for advanced materials analysis and fabrication process control. Two distinct trends are elucidated: the emergence and evaluation of sophisticated in situ optical diagnostic techniques such as photoreflectance and spectroellipsometry and the industrial application of ultra-high sensitivity chemical analysis techniques for contamination monitoring. The volume will serve as a useful and timely overview of this increasingly important field.




Sample Preparation for Trace Element Analysis


Book Description

Following the collection of a sample, every analytical chemist will agree that its subsequent preservation and processing are of paramount importance. The availability of high performance analytical instrumentation has not diminished this need for careful selection of appropriate pretreatment methodologies, intelligently designed to synergistically elicit optimum function from these powerful measurement tools. Sample Preparation for Trace Element Analysis is a modern, comprehensive treatise, providing an account of the state-of-the art on the subject matter. The book has been conceived and designed to satisfy the varied needs of the practicing analytical chemist. It is a multi-author work, reflecting the diverse expertise arising from its highly qualified contributors. The first five chapters deal with general issues related to the determination of trace metals in varied matrices, such as sampling, contamination control, reference materials, calibration and detection techniques. The second part of the book deals with extraction and sampling technologies (totaling 15 chapters), providing theoretical and practical hints for the users on how to perform specific extractions. Subsequent chapters overview seven major representative matrices and the sample preparation involved in their characterization. This portion of the book is heavily based on the preceding chapters dealing with extraction technologies. The last ten chapters are dedicated to sample preparation for trace element speciation.- First title to provide comprehensive sample preparation information, dealing specifically with the analysis of samples for trace elements. - The 39 chapters are authored by international leaders of their fields.







Analytical and Diagnostic Techniques for Semiconductor Materials, Devices, and Processes


Book Description

.".. ALTECH 2003 was Symposium J1 held at the 203rd Meeting of the Electrochemical Society in Paris, France from April 27 to May 2, 2003 ... Symposium M1, Diagnostic Techniques for Semiconductor Materials and Devices, was part of the 202nd Meeting of the Electrochemical Society held in Salt Lake City, Utah, from October 21 to 25, 2002 ..."--p. iii.




Advances in Polarography


Book Description

Advances in Polarography, Volume 2 covers the proceedings of the Second International Congress held at Cambridge in 1959 in honor of the 70th birthday of Professor Heyrovsky. This volume is composed of 35 chapters and begins with intensive discussions on the theoretical and fundamental aspects, as well as pertinent equations in polarography. Considerable chapters are devoted to the chemical and metallurgical applications of the technique, with emphasis on the trace determination of certain compounds. The remaining chapters explore other application of specific polarographic technique, such as nicotinic acid, iso-benzpyrylium salts, and metal complex analysis.







Semiconductor Material and Device Characterization


Book Description

This Third Edition updates a landmark text with the latest findings The Third Edition of the internationally lauded Semiconductor Material and Device Characterization brings the text fully up-to-date with the latest developments in the field and includes new pedagogical tools to assist readers. Not only does the Third Edition set forth all the latest measurement techniques, but it also examines new interpretations and new applications of existing techniques. Semiconductor Material and Device Characterization remains the sole text dedicated to characterization techniques for measuring semiconductor materials and devices. Coverage includes the full range of electrical and optical characterization methods, including the more specialized chemical and physical techniques. Readers familiar with the previous two editions will discover a thoroughly revised and updated Third Edition, including: Updated and revised figures and examples reflecting the most current data and information 260 new references offering access to the latest research and discussions in specialized topics New problems and review questions at the end of each chapter to test readers' understanding of the material In addition, readers will find fully updated and revised sections in each chapter. Plus, two new chapters have been added: Charge-Based and Probe Characterization introduces charge-based measurement and Kelvin probes. This chapter also examines probe-based measurements, including scanning capacitance, scanning Kelvin force, scanning spreading resistance, and ballistic electron emission microscopy. Reliability and Failure Analysis examines failure times and distribution functions, and discusses electromigration, hot carriers, gate oxide integrity, negative bias temperature instability, stress-induced leakage current, and electrostatic discharge. Written by an internationally recognized authority in the field, Semiconductor Material and Device Characterization remains essential reading for graduate students as well as for professionals working in the field of semiconductor devices and materials. An Instructor's Manual presenting detailed solutions to all the problems in the book is available from the Wiley editorial department.




NBS Special Publication


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Publications


Book Description