Wave Mechanics Applied to Semiconductor Heterostructures


Book Description

Examines the basic electronic and optical properties of two- dimensional semiconductor heterostructures based on III-V and II-VI compounds. Explores various consequences of one-dimensional size-quantization on the most basic physical properties of heterolayers. Beginning with basic quantum mechanical properties of idealized quantum wells and superlattices, it discusses the occurrence of bound states when the heterostructure is imperfect or when it is shone with near bandgap light.




Wave Mechanics Applied to Semiconductor Heterostructures


Book Description

Examines the basic electronic and optical properties of two- dimensional semiconductor heterostructures based on III-V and II-VI compounds. Explores various consequences of one-dimensional size-quantization on the most basic physical properties of heterolayers. Beginning with basic quantum mechanical properties of idealized quantum wells and superlattices, it discusses the occurrence of bound states when the heterostructure is imperfect or when it is shone with near bandgap light.




Physics of Photonic Devices


Book Description

The most up-to-date book available on the physics of photonic devices This new edition of Physics of Photonic Devices incorporates significant advancements in the field of photonics that have occurred since publication of the first edition (Physics of Optoelectronic Devices). New topics covered include a brief history of the invention of semiconductor lasers, the Lorentz dipole method and metal plasmas, matrix optics, surface plasma waveguides, optical ring resonators, integrated electroabsorption modulator-lasers, and solar cells. It also introduces exciting new fields of research such as: surface plasmonics and micro-ring resonators; the theory of optical gain and absorption in quantum dots and quantum wires and their applications in semiconductor lasers; and novel microcavity and photonic crystal lasers, quantum-cascade lasers, and GaN blue-green lasers within the context of advanced semiconductor lasers. Physics of Photonic Devices, Second Edition presents novel information that is not yet available in book form elsewhere. Many problem sets have been updated, the answers to which are available in an all-new Solutions Manual for instructors. Comprehensive, timely, and practical, Physics of Photonic Devices is an invaluable textbook for advanced undergraduate and graduate courses in photonics and an indispensable tool for researchers working in this rapidly growing field.




Optics of Excitons in Confined Systems, Proceedings of the INT Meeting, Italy, 24-27 September 1991


Book Description

Optics of Excitons in Confined Systems provides an overview of research in semiconductors that exhibit resonance enhanced optical nonlinearities in the frequency range close to the valence-conduction band gap. The book is divided into the following sections: quantum wells, wires, and dots; superlattices; nonlinear optical properties of confined systems; and effects of external fields on confined systems. Topics range from fundamental theory to more applied aspects of excitons in confined sytems.




Advanced Semiconductor Heterostructures


Book Description

Novel heterostructure devices. Electron-phonon interactions in intersubband laser heterostructures / M.V. Kisin, M. Dutta, and M.A. Stroscio -- Quantum dot infrared detectors and sources / P. Bhattacharya ... [et al.] -- Generation of terahertz emission based on intersubband transitions / Q. Hu -- Mid-infrared GaSb-based lasers with Type-I heterointerfaces / D.V. Donetsky, R.U. Martinelli, and G.L. Belenky -- Advances in quantum-dot research and technology: the path to applications in biology / M.A. Stroscio and M. Dutta -- Potential device applications and basic properties. High-field electron transport controlled by optical phonon emission in nitrides / S.M. Komirenko ... [et al.] -- Cooling by inverse Nottingham effect with resonant tunneling / Y. Yu, R.F. Greene, and R. Tsu -- The physics of single electron transistors / M.A. Kastner -- Carrier capture and transport within tunnel injection lasers: a quantum transport analysis / L.F. Register ... [et al.] -- The influence of environmental effects on the acoustic phonon spectra in quantum-dot heterostructures / S. Rufo, M. Dutta, and M.A. Stroscio -- Quantum devices with multipole-electrode - heterojunctions hybrid structures / R. Tsu.




Optical Properties of Semiconductors


Book Description

It is widely recognized that an understanding of the optical pro perties of matter will give a great deal of important information re levant to the fundamental physical properties. This is especially true in semiconductor physics for which, due to the intrinsic low screening of these materials, the optical response is quite rich. Their spectra reflect indeed as well electronic as spin or phonon transitions. This is also in the semiconductor field that artificial structures have been recently developed, showing for the first time specific physical properties related to the low dimentionality of the electronic and vi bronic properties : with this respect the quantum and fractional quan tum Hall effects are among the most well known aspects. The associated reduced screening is also a clear manifestation of these aspects and as such favors new optical properties or at least significantly enhan ces some of them. For all these reasons, it appeared necessary to try to review in a global way what the optical investigation has brought today about the understanding of the physics of semiconductors. This volume collects the papers presented at the NATO Advanced study Inst i tut e on "Optical Properties of Semiconductors" held at the Ettore Majorana Centre, Erice, Sicily on March 9th to 20th, 1992. This school brought together 70 scientists active in research related to optical properties of semiconductors. There were 12 lecturers who pro vided the main contributions .




Resonant Tunneling in Semiconductors


Book Description

This book contains the proceedings of the NATO Advanced Research Workshop on "Resonant Tunneling in Semiconductors: Physics and Applications", held at Escorial, Spain, on May 14-18, 1990. The tremendous growth in the past two decades in the field of resonant tunneling in semiconductor heterostructures has followed, if not outpaced, the expansion wit nessed in quantum structures in general. Resonant tunneling shares also the multi disciplinary nature of that broad area, with an emphasis on the underlying physics but with a coverage of material systems on the one end and device applications on the other. Indeed, that resonant tunneling provides great flexibility in terms of materials and configurations and that it is inherently a fast process with obvious device impli cations by the presence of a negative differential resistance have contributed to the unrelenting interest in this field. These proceedings consist of 49 refereed articles; they correspond to both invited and contributed talks at the workshop. Because of the intertwinning nature of the subject matter, it has been difficult to subdivide them in well-defined sections. Instead, they are arranged in several broad categories, meant to serve only as guidelines of emphasis on different topics and aspects. The book starts with an introduction to res onant tunneling by providing a perspective of the field in the first article. This is fol lowed by discussions of different material systems with various band-structure effects.




Quantum Heterostructures


Book Description

Quantum Heterostructures provides a detailed description of the key physical and engineering principles of quantum semiconductor heterostructures. Blending important concepts from physics, materials science, and electrical engineering, it also explains clearly the behavior and operating features of modern microelectronic and optoelectronic devices. The authors begin by outlining the trends that have driven development in this field, most importantly the need for high-performance devices in computer, information, and communications technologies. They then describe the basics of quantum nanoelectronics, including various transport mechanisms. In the latter part of the book, they cover novel microelectronic devices, and optical devices based on quantum heterostructures. The book contains many homework problems and is suitable as a textbook for undergraduate and graduate courses in electrical engineering, physics, or materials science. It will also be of great interest to those involved in research or development in microelectronic or optoelectronic devices.




Field Effect Transistors, A Comprehensive Overview


Book Description

This book discusses modern-day Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) and future trends of transistor devices. This book provides an overview of Field Effect Transistors (FETs) by discussing the basic principles of FETs and exploring the latest technological developments in the field. It covers and connects a wide spectrum of topics related to semiconductor device physics, physics of transistors, and advanced transistor concepts. This book contains six chapters. Chapter 1 discusses electronic materials and charge. Chapter 2 examines junctions, discusses contacts under thermal-equilibrium, metal-semiconductor contacts, and metal-insulator-semiconductor systems. Chapter 3 covers traditional planar Metal Oxide Semiconductor Field Effect Transistors (MOSFETs). Chapter 4 describes scaling-driving technological variations and novel dimensions of MOSFETs. Chapter 5 analyzes Heterojunction Field Effect Transistors (FETs) and also discusses the challenges and rewards of heteroepitaxy. Finally, Chapter 6 examines FETs at molecular scales. Links the discussion of contemporary transistor devices to physical processes Material has been class-tested in undergraduate and graduate courses on the design of integrated circuit components taught by the author Contains examples and end-of-chapter problems Field Effect Transistors, A Comprehensive Overview: From Basic Concepts to Novel Technologies is a reference for senior undergraduate / graduate students and professional engineers needing insight into physics of operation of modern FETs. Pouya Valizadeh is Associate Professor in the Department of Electrical and Computer Engineering at Concordia University in Quebec, Canada. He received B.S. and M.S. degrees with honors from the University of Tehran and Ph.D. degree from The University of Michigan (Ann Arbor) all in Electrical Engineering in 1997, 1999, and 2005, respectively. Over the past decade, Dr. Valizadeh has taught numerous sections of five different courses covering topics such as semiconductor process technology, semiconductor materials and their properties, advanced solid state devices, transistor design for modern CMOS technology, and high speed transistors.




Quantum Theory of Solids


Book Description

Quantum Theory of Solids presents a concisely-structured tour of the theory relating to chemical bonding and its application to the three most significant topics in solid state physics: semiconductors, magnetism, and superconductivity--topics that have seen major advances in recent years. This is a unique treatment that develops the concepts of quantum theory for the solid state from the basics through to an advanced level, encompassing additional quantum mechanics techniques, such as the variational method and perturbation theory. Written at the senior undergraduate/masters level, it provides an exceptional grounding in the subject.