Microwave Noise in Semiconductor Devices


Book Description

A thorough reference work bridging the gap between contemporary and traditional approaches to noise problems Noise in semiconductor devices refers to any unwanted signal or disturbance in the device that degrades performance. In semiconductor devices, noise is attributed to hot-electron effects. Current advances in information technology have led to the development of ultrafast devices that are required to provide low-noise, high-speed performance. Microwave Noise in Semiconductor Devices considers available data on the speed versus noise trade-off and discusses optimal solutions in semiconductors and semiconductor structures. These solutions are of direct interest in the research and development for fast, efficient, and reliable communications systems. As the only book of its kind accessible to practicing engineers, the material is divided into four parts-the kinetic theory of fluctuations and its corollaries, the methods of measurements of microwave noise, low-dimensional structures, and, finally, devices. With over 100 illustrations presenting recent experimental data for up-to-date semiconductor structures designed for ultrafast electronics, together with results of microscopic simulation where available, these examples, tables, and references offer a full comprehension of electronic processes and fluctuation in dimensionally quantizing structures. Bridging the apparent gap between the microscopic approach and the equivalent circuit approach, Microwave Noise in Semiconductor Devices considers microwave fluctuation phenomena and noise in terms of ultrafast kinetic processes specific to modern quantum-well structures. Scientists in materials science, semiconductor and solid-state physics, electronic engineers, and graduate students will all appreciate this indispensable review of contemporary and future microwave and high-speed electronics.




WOCSDICE 2000


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WOCSDICE 2000 Proceedings


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WDM and Photonic Networks


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Volume 1 WDM and Photonic Networks will focus on recent developments in long-haul WDM and photonic networks and will include invited papers from key vendors and technologists. A paper on DWDM by Lucent will show how Raman amplification enables the quadrupling of the line rate from OC-192 to OC-768 in a recent 1.6Tb/s experiment.




Microwave Journal


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Survey of Semiconductor Physics, Electronic Transport in Semiconductors


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A comprehensive treatment of the fundamentals of semiconductor physics and materials science. The first edition of the Survey of Semiconductor Physics set the standard for the multifaceted exploration of semiconductor physics. Now, Dr. Karl B?er, one of the world's leading experts in solid-state physics, with assistance from a team of the fields top researchers, expands this coverage in the Second Edition. Completely updated and substantially expanded, the Survey of Semiconductor Physics, Second Edition covers the basic elements in the entire field of semiconductor physics, emphasizing the materials and surface science involved. The Second Edition uses similar theoretical approaches and analyses for the basic material classes: crystalline, amorphous, quantum structures, and organics. The first volume provides thorough coverage of the structure of semiconductors, including: Phonons Energy bands Photons as they interact with the semiconductor and other particles Defects Generation and recombination Kinetics Part I of the Volume 2 begins with a thorough treatment of the carrier transport in homogeneous semiconductors, creating the context for the studies of inhomogeneous semiconductors that consume the majority of the text. The editors' primary concerns are the effects and implications of surfaces, interfaces, inhomogeneous doping, and space charges upon the electronic transport. Part II provides a general overview of the types of abrupt material inhomogeneities that are produced by interfaces and surfaces. Part III presents a detailed mathematical analysis of the interrelation between space charges, fields, and carrier transport, applying these calculations to a wide array of specific examples. Returning to his stated emphasis on practical application, B?er then focuses on the material preparations that are essential to produce semiconductor devices in Part IV and examines two specific examples of semiconductors-solar cells and light-emitting diodes-in Part V. In both volumes, extensive appendices simplify searches for important formulae and tables. An elaborate word index and reference listings allow readers to use the reference in multiple ways to discover expanding literature; to explore similarities and connecting principles in other fields; to find out how others in adjacent fields came up with intriguing solutions to similar problems; and to obtain a broad overview of the entire field of semiconductor physics.




Index of Conference Proceedings


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IEEE Circuits & Devices


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