Optical Properties on Indium Antimonide and Indium Arsenide in the Visible and Near Infrared
Author : Lyn Alan Brooks
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Page : pages
File Size : 28,91 MB
Release : 1971
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Author : Lyn Alan Brooks
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Page : pages
File Size : 28,91 MB
Release : 1971
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Author : Ronald M. Culpepper
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Page : 168 pages
File Size : 45,20 MB
Release : 1966
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The reflectivities and transmittances between 5 and 20 microns of several indium arsenide samples were measured at 300 K and 77 K. These reflectivities and transmittances were used to calculate experimental free carrier absorption coefficients. Comparison with results obtained from classical dispersion theory shows poor agreement in both magnitude and wavelength dependence. The experimental results are, however, in good agreement with the quantum mechanical free carrier absorption theory of Haga and Kimura. (Author).
Author : Mark Allan Corbett
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Page : 0 pages
File Size : 48,25 MB
Release : 2005
Category : Indium arsenide
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Author : Mark Allan Corbett
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Page : 296 pages
File Size : 36,94 MB
Release : 2005
Category : Indium arsenide
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Author : Robert Eugene Morrison
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Page : 162 pages
File Size : 24,35 MB
Release : 1961
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The reflectivities of InAs, InSb, and GaAs were measured between 0 and 6.0 ev, and the optical constants were computed from these data, using the dispersion relation between the phase and the magnitude of the reflectivity. Near 2.5 and 5.0 ev, reflectivity peaks appear, the lower maxima splitting into 2 smaller peaks whose separations are 0.35 ev, 0.50 ev, and 0.20 ev i b) (Ultraviolet spectroscopy, Infrared spectroscopy, Spectro photometers, Photomultipliers.) the reflectivities of InAs, InSb, and GaAs were measured between 0 and 6.0 ev, and the optical constants were computed from these data, using the dispersion relation between the phase and the magnitude of the reflectivity. Near 2.5 and 5.0 ev, reflectivity peaks appear, the lower maxima splitting into 2 smaller peaks whose separations are 0.35 ev, 0.50 ev, and 0.20 ev, respectively, for the 3 materials. The imaginary part of the reciprocal of the dielectric constant, whose values at 6.0 ev are 1.0, 1.7, and 0.8, respectively, appears to have a maximum just beyond 6.0 ev. These values are uncertain because of the effect of extrapolating the reflectivity to energies above 6.0 ev. (Author).
Author : H. A. MacKenzie
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Page : pages
File Size : 49,58 MB
Release : 1983
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Author : Michael A. Marciniak
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Page : 262 pages
File Size : 18,70 MB
Release : 1995
Category : Indium antimonide crystals
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Author : Yixuan Shen
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Page : 0 pages
File Size : 33,94 MB
Release : 2023
Category : Gallium arsenide semiconductors
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Author : J. I. Hughes
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Page : 0 pages
File Size : 44,13 MB
Release : 1991
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Author : Scott C. Phillips
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Page : 121 pages
File Size : 29,59 MB
Release : 2004-03
Category : Quantum electronics
ISBN : 9781423516262
Indium arsenide-antimonide (InAsSb) semiconductors have been determined to emit in the 3-5 micrometer range, the window of interest for countermeasures against infrared electro-optical threats. This experiment set out to cross the bulk to quantum well characterization barrier by optically characterizing two sets of compositionally matched type I quantum well and bulk well material samples. Absorption measurements determined the band gap energy of the bulk samples and the first allowed subband transition for the quantum wells. By collecting absorption spectra at different temperatures, the trend of the energy transitions was described by fitting a Varshni equation to them. The expected result of the quantum well always having slightly higher energy than its bulk counterpart was observed. An etalon effect also was observed in the quantum wells, caused by the cladding layers in those samples. Photoluminescence spectra also were collected to characterize the change in electron temperature (Te) as the excitation power was varied. As expected, electron temperature increased with increasing power and increasing temperature. The start of the longitudinal optical phonon-dominated cooling range due to excitation intensity also was determined for the samples from 1/Te. It was found that the quantum well required higher excitation intensities to achieve this effect. Lastly, the energy transitions found for the quantum well samples were compared to those found by a finite element method model. The predicted energies all had a constant value above what was found experimentally, indicating the program had a translation error within it. (10 tables, 47 figures, 18 refs.)