Microwave Field-effect Transistors
Author : Raymond Sydney Pengelly
Publisher : Wiley-Blackwell
Page : 668 pages
File Size : 42,65 MB
Release : 1986
Category : Technology & Engineering
ISBN :
Author : Raymond Sydney Pengelly
Publisher : Wiley-Blackwell
Page : 668 pages
File Size : 42,65 MB
Release : 1986
Category : Technology & Engineering
ISBN :
Author : Raymond S. Pengelly
Publisher : John Wiley & Sons
Page : 496 pages
File Size : 33,44 MB
Release : 1982
Category : Technology & Engineering
ISBN :
Author : Nigel Peter Maxfield
Publisher :
Page : pages
File Size : 28,90 MB
Release : 1981
Category :
ISBN :
Author : Frank Schwierz
Publisher : Wiley-Interscience
Page : 510 pages
File Size : 23,14 MB
Release : 2003
Category : Technology & Engineering
ISBN :
Comprehensive and up-to-date coverage of currently used transistors for commercial and military applications. Authors are recognized experts with previous publications. Updated descriptions of state-of-the-art devices available on Wiley Web site.
Author : Lovell H. Camnitz
Publisher :
Page : 430 pages
File Size : 41,15 MB
Release : 1986
Category : Field-effect transistors
ISBN :
Author : Raymond Sydney Pengelly
Publisher : Wiley-Blackwell
Page : 668 pages
File Size : 15,18 MB
Release : 1986
Category : Technology & Engineering
ISBN :
Author : Peter Aaen
Publisher : Cambridge University Press
Page : 375 pages
File Size : 36,61 MB
Release : 2007-06-25
Category : Technology & Engineering
ISBN : 113946812X
This book is a comprehensive exposition of FET modeling, and is a must-have resource for seasoned professionals and new graduates in the RF and microwave power amplifier design and modeling community. In it, you will find descriptions of characterization and measurement techniques, analysis methods, and the simulator implementation, model verification and validation procedures that are needed to produce a transistor model that can be used with confidence by the circuit designer. Written by semiconductor industry professionals with many years' device modeling experience in LDMOS and III-V technologies, this was the first book to address the modeling requirements specific to high-power RF transistors. A technology-independent approach is described, addressing thermal effects, scaling issues, nonlinear modeling, and in-package matching networks. These are illustrated using the current market-leading high-power RF technology, LDMOS, as well as with III-V power devices.
Author : Johann-Friedrich Luy
Publisher : expert verlag
Page : 222 pages
File Size : 45,44 MB
Release : 2006
Category :
ISBN : 9783816922025
Author : Subhash Chandra Bera
Publisher : Springer
Page : 691 pages
File Size : 36,25 MB
Release : 2018-12-11
Category : Technology & Engineering
ISBN : 9811330042
The book discusses active devices and circuits for microwave communications. It begins with the basics of device physics and then explores the design of microwave communication systems including analysis and the implementation of different circuits. In addition to classic topics in microwave active devices, such as p-i-n diodes, Schottky diodes, step recovery diodes, BJT, HBT, MESFET, HFET, and various microwave circuits like switch, phase shifter, attenuator, detector, amplifier, multiplier and mixer, the book also covers modern areas such as Class-F power amplifiers, direct frequency modulators, linearizers, and equalizers. Most of the examples are based on practical devices available in commercial markets and the circuits presented are operational. The book uses analytical methods to derive values of circuit components without the need for any circuit design tools, in order to explain the theory of the circuits. All the given analytical expressions are also cross verified using commercially available microwave circuit design tools, and each chapter includes relevant diagrams and solved problems. It is intended for scholars in the field of electronics and communication engineering.
Author : Mohammad Abdeen
Publisher :
Page : 264 pages
File Size : 22,99 MB
Release : 2004
Category : Computer-aided design
ISBN :