Reflectivity and Optical Constants of Indium Arsenide, Indium Antimonide, and Gallium Arsenide


Book Description

The reflectivities of InAs, InSb, and GaAs were measured between 0 and 6.0 ev, and the optical constants were computed from these data, using the dispersion relation between the phase and the magnitude of the reflectivity. Near 2.5 and 5.0 ev, reflectivity peaks appear, the lower maxima splitting into 2 smaller peaks whose separations are 0.35 ev, 0.50 ev, and 0.20 ev i b) (Ultraviolet spectroscopy, Infrared spectroscopy, Spectro photometers, Photomultipliers.) the reflectivities of InAs, InSb, and GaAs were measured between 0 and 6.0 ev, and the optical constants were computed from these data, using the dispersion relation between the phase and the magnitude of the reflectivity. Near 2.5 and 5.0 ev, reflectivity peaks appear, the lower maxima splitting into 2 smaller peaks whose separations are 0.35 ev, 0.50 ev, and 0.20 ev, respectively, for the 3 materials. The imaginary part of the reciprocal of the dielectric constant, whose values at 6.0 ev are 1.0, 1.7, and 0.8, respectively, appears to have a maximum just beyond 6.0 ev. These values are uncertain because of the effect of extrapolating the reflectivity to energies above 6.0 ev. (Author).













NBS Special Publication


Book Description




Handbook of Optical Constants of Solids, Author and Subject Indices for Volumes I, II, and III


Book Description

While bits and pieces of the index of refraction n and extinction coefficient k for a given material can be found in several handbooks, the Handbook of Optical Constants of Solids gives for the first time a single set of n and k values over the broadest spectral range (ideally from x-ray to mm-wave region). The critiquers have chosen the numbers for you, based on their own broad experience in the study of optical properties. Whether youneed one number at one wavelength or many numbers at many wavelengths, what is available in the literature is condensed down into a single set of numbers. * Contributors have decided the best values for n and k * References in each critique allow the reader to go back to the original data to examine and understand where the values have come from * Allows the reader to determine if any data in a spectral region needs to be filled in * Gives a wide and detailed view of experimental techniques for measuring the optical constants n and k * Incorporates and describes crystal structure, space-group symmetry, unit-cell dimensions, number of optic and acoustic modes, frequencies of optic modes, the irreducible representation, band gap, plasma frequency, and static dielectric constant.







Handbook of Optical Constants of Solids, Five-Volume Set


Book Description

This set of five volumes, four volumes edited by Edward D. Palik and a volume by Gorachand Ghosh, is a unique resource for any science and technology library. It provides materials researchers and optical device designers with reference facts in a context not available anywhere else. The singular functionality of the set derives from the unique format for the three core volumes that comprise the Handbook of Optical Constants of Solids. The Handbook satisfies several essential needs: first, it affords the most comprehensive database of the refractive index and extinction (or loss) coefficient of technically important and scientifically interesting dielectrics. This data has been critically selected and evaluated by authorities on each material. Second, the dielectric constant database is supplemented by tutorial chapters covering the basics of dielectric theory and reviews of experimental techniques for each wavelength region and material characteristic. As an additional resource, two of the tutorial chapters summarize the relevant characteristics of each of the materials in the database.The data in the core volumes have been collected and analyzed over a period of twelve years, with the most recent completed in 1997. The volumes systematically define the dielectric properties of 143 of the most engaging materials, including metals, semiconductors, and insulators. Together, the three Palik books contain nearly 3,000 pages, with about 2/3 devoted to the dielectric constant data. The tutorial chapters in the remaining 1/3 of the pages contain a wealth of information, including some dielectric data. Hence, the separate volume, Index to Handbook of Optical Constants of Solids, which is included as part of the set, substantially enhances the utility of the Handbook and in essence, joins all the Palik volumes into one unit. It isthen of great importance to users of the set. A final volume rounds out the set. The Handbook of Thermo-Optic Coefficients of Optical Materials with Applications collects refractive index measurements and their temperature dependence for a large number of crystals and glasses. Mathematical models represent these data, and in turn are used in the design of nonlinear optical devices. * Unique source of extremely useful optical data for a very broad community of scientists, researchers, and practitioners* Will be of great practical applicability to both industry and research* Presents optical constants for a broadest spectral range, for a very large number of materials: Paliks three volumes include 143 materials including 43 elements; Ghoshs volume includes some 70 technologically interesting crystals and many commercial glasses* Includes a special index volume that enables the user to search for the information in the three Palik volumes easily and quickly* Critique chapters in the Palik volumes discuss the data and give reference to most of the literature available for each material* Presents various techniques for measuring the optical constants and mathematical models for analytical calculations of some data




Electronic Structure and Optical Properties of Semiconductors


Book Description

We began planning and writing this book in the late 1970s at the suggestion of Manuel Cardona and Helmut Lotsch. We also received considerable en couragement and stimulation from colleagues. Some said there was a need for instructional material in this area while others emphasized the utility of a research text. We tried to strike a compromise. The figures, tables, and references are included to enable researchers to obtain quickly essential information in this area of semiconductor research. For instructors and stu dents, we attempt to cover some basic ideas about electronic structure and semiconductor physics with applications to real, rather than model, solids. We wish to thank our colleagues and collaborators whose research re sults and ideas are presented here. Special thanks are due to Jim Phillips who influenced us both during our formative years and afterwards. We are grateful to Sari Yamagishi for her patience and skill with the typing and production of the manuscript. Finally, we acknowledge the great patience of Helmut Lotsch and Manuel Cardona. Berkeley, CA M.L. Cohen Minneapolis, MN, J.R. Chelikowsky March 1988 VII Contents 1. Introduction............................................... 1 2. Theoretical Concepts and Methods ..................... 4 2.1 The One-Electron Model and Band Structure............ 7 2.2 Properties of En(k) ...................................... 11 3. Pseudopotentials. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 . . . . . . . . . . . . 3.1 The Empirical Pseudopotential Method.................. 20 3.2 Self-Consistent and Ab Initio Pseudopotentials ........... 25 4. Response Functions and Density of States .............. 30 4.1 Charge Density and Bonding ................... . . . . . . . . . 38 .




Optical Properties of Gallium Arsenide and Indium Gallium Arsenide Quantum Wells and Their Applications to Opto-electronic Devices


Book Description

In this thesis we investigate the optical properties of modulation doped GaAs/AlGaAs and strained-layer undoped InGaAs/GaAs multiple quantum well structures (MQWS). The phenomena studied are the effects of carrier, strain, and the electric field on the absorption of excitons. For GaAs/AlGaAs modulation doped MQWS, the quenching of excitons by free carriers has been demonstrated. The comparison of the experimental results with calculations which consider phase space filling, screening, and exchange interaction showed the phase space filling to be the dominant mechanism responsible for the change of oscillator strength and binding energy of excitons associated with partially filled subband. On the other hand, the screening and exchange interaction are equally important to excitons associated with empty subbands. For InGaAs/GaAs strained-layer MQWS, we have demonstrated that the band edges are dramatically modified by strain. We determined the band discontinuities at InGaAs/GaAs interfaces using optical absorption, and showed that in this structure the heavy holes are confined in InGaAs layers while the light holes are in GaAs layers, in contrast to GaAs/AlGaAs MQWS. We also explore applications of GaAs/AlGaAs and InGaAs/GaAs MQWS to opto-electronic devices. The principle of devices investigated is mainly based on the electric field effect on the excitonic absorption in MQWS (the quantum confined Stark effect). Two examples presented in this thesis are the strained-layer InGaAs/GaAs MQWS electroabsorption modulators grown on GaAs substrates and the GaAs/AlGaAs MQWS reflection modulators grown on Si substrates. The large modulation observed in the absorption coefficient by an electric field is expected to facilitate opto-electronic integration.