Silicon RF Power MOSFETS


Book Description

"The world-wide proliferation of cellular networks has revolutionized telecommunication systems. The transition from Analog to Digital RF technology enabled substantial increase in voice traffic using available spectrum, and subsequently the delivery of digitally based text messaging, graphics and even streaming video. The deployment of digital networks has required migration to multi-carrier RF power amplifiers with stringent demands on linearity and efficiency. This book describes the physics, design considerations and RF performance of silicon power Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs) that are at the heart of the power amplifiers. The recent invention and commercialization of RF power MOSFETs based on the super-linear mode of operation is described in this book for the first time. In addition to the analytical treatment of the physics, extensive description of transistor operation is provided by using the results of numerical simulations. Many novel power MOSFET structures are analyzed and their performance is compared with those of the laterally-diffused (LD) MOSFET that are currently used in 2G and 3G networks."--BOOK JACKET.Title Summary field provided by Blackwell North America, Inc. All Rights Reserved




Silicon RF Power MOSFETS


Book Description

"The world-wide proliferation of cellular networks has revolutionized telecommunication systems. The transition from Analog to Digital RF technology enabled substantial increase in voice traffic using available spectrum, and subsequently the delivery of digitally based text messaging, graphics and even streaming video. The deployment of digital networks has required migration to multi-carrier RF power amplifiers with stringent demands on linearity and efficiency. This book describes the physics, design considerations and RF performance of silicon power Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs) that are at the heart of the power amplifiers. The recent invention and commercialization of RF power MOSFETs based on the super-linear mode of operation is described in this book for the first time. In addition to the analytical treatment of the physics, extensive description of transistor operation is provided by using the results of numerical simulations. Many novel power MOSFET structures are analyzed and their performance is compared with those of the laterally-diffused (LD) MOSFET that are currently used in 2G and 3G networks."--BOOK JACKET.Title Summary field provided by Blackwell North America, Inc. All Rights Reserved




Multiharmonic Tuning Behavior of MOSFET RF Power Amplifiers


Book Description

This thesis investigates multiharmonic tuning of RF power amplifiers using power MOSFETs implemented in bulk silicon CMOS technology. The use of this technique may lead to the low-cost implementation of the RF power amplifier integrated on the same chip as the rest of the wireless transceiver. The work proposes a complete classification of multiharmonic tuning into four basic modes: both odd/even harmonics SHORT (SS), odd harmonics SHORT and even harmonics OPEN (SO), odd harmonics OPEN and even harmonics SHORT (OS), and both odd/even harmonics OPEN (OO). Conventional power amplifiers can then be characterized using these modes of operation in so far as multiharmonic tuning is concerned. A systematic multiharmonic tuning optimization procedure is introduced to find the optimal harmonic terminations. The newly proposed OO mode features a sinusoidal drain current waveform containing no harmonics, resulting in little or no energy wasted at harmonic frequencies and yielding high efficiency. To study the multiharmonic tuning behavior of MOSFET RF power amplifiers, power MOSFETs were implemented in a 0.25[mu]m silicon CMOS process. For power amplifiers using these MOSFETs, at 1.88GHz, the OO mode yields the highest efficiency (PAE = 61%) with a 23.3dBm output power at a 12dBm input power and at a 2.0V supply voltage.




Modeling and Design Techniques for RF Power Amplifiers


Book Description

Achieve higher levels of performance, integration, compactness, and cost-effectiveness in the design and modeling of radio-frequency (RF) power amplifiers RF power amplifiers are important components of any wireless transmitter, but are often the limiting factors in achieving better performance and lower cost in a wireless communication system—presenting the RF IC design community with many challenges. The next-generation technological advances presented in this book are the result of cutting-edge research in the area of large-signal device modeling and RF power amplifier design at the Georgia Institute of Technology, and have the potential to significantly address issues of performance and cost-effectiveness in this area. Richly complemented with hundreds of figures and equations, Modeling and Design Techniques for RF Power Amplifiers introduces and explores the most important topics related to RF power amplifier design under one concise cover. With a focus on efficiency enhancement techniques and the latest advances in the field, coverage includes: Device modeling for CAD Empirical modeling of bipolar devices Scalable modeling of RF MOSFETs Power amplifier IC design Power amplifier design in silicon Efficiency enhancement of RF power amplifiers The description of state-of-the-art techniques makes this book a valuable and handy reference for practicing engineers and researchers, while the breadth of coverage makes it an ideal text for graduate- and advanced undergraduate-level courses in the area of RF power amplifier design and modeling.




Advanced Power MOSFET Concepts


Book Description

During the last decade many new concepts have been proposed for improving the performance of power MOSFETs. The results of this research are dispersed in the technical literature among journal articles and abstracts of conferences. Consequently, the information is not readily available to researchers and practicing engineers in the power device community. There is no cohesive treatment of the ideas to provide an assessment of the relative merits of the ideas. "Advanced Power MOSFET Concepts" provides an in-depth treatment of the physics of operation of advanced power MOSFETs. Analytical models for explaining the operation of all the advanced power MOSFETs will be developed. The results of numerical simulations will be provided to give additional insight into the device physics and validate the analytical models. The results of two-dimensional simulations will be provided to corroborate the analytical models and give greater insight into the device operation.




RF and Microwave Power Amplifier Design


Book Description

This is a rigorous tutorial on radio frequency and microwave power amplifier design, teaching the circuit design techniques that form the microelectronic backbones of modern wireless communications systems. Suitable for self-study, corporate training, or Senior/Graduate classroom use, the book combines analytical calculations and computer-aided design techniques to arm electronic engineers with every possible method to improve their designs and shorten their design time cycles.




RF and mm-Wave Power Generation in Silicon


Book Description

RF and mm-Wave Power Generation in Silicon presents the challenges and solutions of designing power amplifiers at RF and mm-Wave frequencies in a silicon-based process technology. It covers practical power amplifier design methodologies, energy- and spectrum-efficient power amplifier design examples in the RF frequency for cellular and wireless connectivity applications, and power amplifier and power generation designs for enabling new communication and sensing applications in the mm-Wave and THz frequencies. With this book you will learn: Power amplifier design fundamentals and methodologies Latest advances in silicon-based RF power amplifier architectures and designs and their integration in wireless communication systems State-of-the-art mm-Wave/THz power amplifier and power generation circuits and systems in silicon Extensive coverage from fundamentals to advanced design topics, focusing on various layers of abstraction: from device modeling and circuit design strategy to advanced digital and mixed-signal architectures for highly efficient and linear power amplifiers New architectures for power amplifiers in the cellar and wireless connectivity covering detailed design methodologies and state-of-the-art performances Detailed design techniques, trade-off analysis and design examples for efficiency enhancement at power back-off and linear amplification for spectrally-efficient non-constant envelope modulations Extensive coverage of mm-Wave power-generation techniques from the early days of the 60 GHz research to current state-of the-art reconfigurable, digital mm-Wave PA architectures Detailed analysis of power generation challenges in the higher mm-Wave and THz frequencies and novel technical solutions for a wide range for potential applications, including ultrafast wireless communication to sensing, imaging and spectroscopy Contributions from the world-class experts from both academia and industry




mm-Wave Silicon Power Amplifiers and Transmitters


Book Description

Build high-performance, energy-efficient circuits with this cutting-edge guide to designing, modeling, analysing, implementing and testing new mm-wave systems.




Power MOSFETs


Book Description

Details the theory of power MOSFETs and their applications. Explains the basis of MOSFET characteristics, and the features that determine MOSFET behavior. Examines the interaction of the MOSFET device with other elements in the circuit, and how device characteristics influence circuit design. Describes several circuits at length to highlight the practical details of power MOSFET use.




Modeling and Characterization of RF and Microwave Power FETs


Book Description

This book is a comprehensive exposition of FET modeling, and is a must-have resource for seasoned professionals and new graduates in the RF and microwave power amplifier design and modeling community. In it, you will find descriptions of characterization and measurement techniques, analysis methods, and the simulator implementation, model verification and validation procedures that are needed to produce a transistor model that can be used with confidence by the circuit designer. Written by semiconductor industry professionals with many years' device modeling experience in LDMOS and III-V technologies, this was the first book to address the modeling requirements specific to high-power RF transistors. A technology-independent approach is described, addressing thermal effects, scaling issues, nonlinear modeling, and in-package matching networks. These are illustrated using the current market-leading high-power RF technology, LDMOS, as well as with III-V power devices.